page:p2 - p 1 plastic - encapsulate transistors guangdong hottech indus trial co,. ltd. fe a tures high vol t age marking : a 94 maximum ratings (ta=25 unless otherwise noted) par a met e r symbol v alue uni t col l ector - ba s e v o l t age v cbo - 4 00 v col l ector - emitter v o l t age v ceo - 4 00 v emitter - base v o l t a g e v ebo - 5 v col l ector cur re n t - conti n u o us i c - 2 00 ma col l ector p o w e r dissi p a t i on p c 625 mw juncti o n t emperature t j 150 s torage t e mp e rature t stg - 55 - 150 electrical characteristics (tamb=25 unless otherwise specified) p a r a m e ter s y mbol t es t c ondit i ons min typ m ax unit collector - base breakd o w n v o l t age v cbo i c = - 100 a , i e =0 - 400 v collector - emitter bre a kd o w n v ol t age v ceo i c = - 1 ma , i b =0 - 400 v emitter - base breakd o w n v o l t age v ebo i e = - 100 a, i c =0 - 5 v collector cut - off cur rent i cbo v cb = - 400 v , i e =0 - 0.1 ua collector cut - off current i ceo v ce = - 400 v - 5 ua emitter cut - off current i ebo v eb = - 4 v , i c =0 - 0.1 ua dc c urr e nt gain h fe (1) v ce = - 10v , i c = - 1 0ma 80 300 h fe(2) v ce = - 10 v , i c = - 1 ma 70 h fe(3) v ce = - 10 v , i c = - 100ma 6 0 collector - emitter satu r ation v o l t age v ce(sat) i c = - 1 0ma, i b = - 1 ma - 0.2 v v ce(sat) i c = - 50ma, i b = - 5 ma - 0.3 v base - emitter sa t a r ation v ol t age v be(sat) i c = - 10ma, i b = - 1ma - 0.75 v t r a n s ition f r e qu e ncy f t v ce = - 20 v , i c = - 10ma ,f =30mhz 50 mhz classification of hfe rank a b 1 b 2 c r a nge 80 - 1 00 100 - 150 150 - 200 200 - 250 (p n p ) 1. emitter 2. base to - 92 3. collecto A94
page:p2 - p 2 plastic - encapsulate transistors guangdong hottech indus trial co,. ltd. a9 4 typical characteristics -0 -2 -4 -6 -8 -10 -12 -14 -16 -18 -20 -22 0 2 4 6 8 10 12 14 16 18 -1 -10 -100 -500 -1000 -1 -10 -100 10 100 1000 -1 -10 -100 -0 -2 -4 -6 -8 -10 -12 -14 -16 -18 common emitter t a =25 100ua 90ua 80ua 70ua 60ua 50ua 40ua 30ua 20ua i b =-10ua collector current i c (ma) collector-emitter voltage v ce (v) i c ?? -200 =10 i c v besat ?? t a =25 t a =100 base-emitter saturation voltage v besat (mv) collector current i c (ma) -200 -200 i c common emitter v ce = -10v t a =100 t a =25 collector current i c (ma) dc current gain h fe -200 -10 -1 -0.1 -0.01 h fe ?? =10 i c v cesat ?? t a =100 t a =25 collector current i c (ma) collector-emitter saturation voltage v cesat (v) -100ua -90ua -80ua -70ua -60ua -50ua -40ua -30ua -20ua v ce
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